Ion implanter and ion implanting method using the same

Details Ion implanter and ion implanting method using the same Ion implanter and ion implanting method using the same

1996-12-20

1998-09-29

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, H01J 4942

Patent

active

058148221

ABSTRACT:
An ion implanter and an ion implanting method compatible for both positive and negative ions. The ion implanter has an ion extractor and a mass analyzer for deflecting ions, having one of a positive or negative charged state, in a predetermined direction regardless of the charged state of the ions. A polarity converter changes the flux direction of a magnetic field in the mass analyzer according to the charged state of the ions. Thus, shallow and deep impurity layers can be formed into wafers without changing ion implanters, such that BF.sup.+ as well as B.sup.+ or P.sup.+ can be implanted with a single ion implanter. As a result, the product yield of a semiconductor device can be improved.

REFERENCES:
patent: 4514637 (1985-04-01), Dykstra et al.

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