Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML
Reexamination Certificate
active
06903349
ABSTRACT:
An ion implanter incorporates an r.f. accelerator assembly to provide ions for implant at high energies. The accelerator assembly includes electrodes mounted in the vacuum chamber so as to be movable between an operational position for generating and accelerating electric field and a non operational position within the vacuum chamber displaced clear of the beam path. An Actuator moves the electrode between the operational and non operation positions. For energy implanting, the electrodes are in the operational position and for low energy implants the actuator moves the electrodes to the non operational position clear of the beam path.
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A.D. Vlasov,Theory of Linear Accelerators, Chapter 2.5, published in English, translated 1968.
H.F. Glavish et al., “Production High Energy Implanters Using Radio Frequency Acceleration” in Nuclear Instruments and Methods in Physics Research, B21 (1987), pp. 264-269.
Gordon John
Horner Ronald F.
Mitchell Robert
Relleen Keith
Smick Theodore H.
Applied Materials Inc.
Boult Wade & Tennant
Nguyen Kiet T.
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