Ion implanted resistor having controlled temperature coefficient

Details Ion implanted resistor having controlled temperature coefficient Ion implanted resistor having controlled temperature coefficient

1974-05-31

1976-03-30

James, Andrew J.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 91, 357 88, 357 40, 338 35, H01L 2702

Patent

active

039478661

ABSTRACT:
Ion implanted resistor having a semiconductor body of one conductivity type and having a planar surface with a region of opposite conductivity type formed in the semiconductor body which is defined by a PN junction extending to the surface. One portion of the region of opposite conductivity type in cross-section has a greater depth than the remaining portion whereby there is provided a resistance whose effective value is the value given by the parallel resistance of said one portion and the remaining portion to thereby provide a resistor having a controlled temperature coefficient.

REFERENCES:
patent: 3387193 (1968-06-01), Donald
patent: 3548269 (1970-12-01), MacDougall et al.
patent: 3578514 (1971-05-01), Lesk
patent: 3596347 (1971-08-01), Beale
patent: 3629782 (1971-12-01), Sahni
patent: 3683306 (1972-08-01), Bulthuis et al.
patent: 3697827 (1972-10-01), Simon
patent: 3725136 (1973-04-01), Morgan
patent: 3739237 (1973-06-01), Shannon
patent: 3796929 (1974-03-01), Nicholas et al.
patent: 3829890 (1974-08-01), Perloff et al.
Masking Technique for Ion Implantation, by Fairfield, IBM Technical Disclosure Bulletin, Vol. 13, No. 3, Aug. 1970, p. 806.
Trimming of Ion Implanted Resistor, by Wilbarg, IBM Technical Disclosure Bulletin, Vol. 13, No. 6, Nov. 1970, p. 1698.

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