Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-16
1994-02-01
Gregory, Bernarr E.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 77, 257289, 257648, H01L 2978
Patent
active
H00012874
ABSTRACT:
A field effect transistor comprises a diamond substrate which has a p-type ion implanted region coterminous with a surface of the diamond substrate, wherein the ion implanted region has a hole concentration in the range of 1.times.10.sup.15 to 1.times.10.sup.17 holes/cm.sup.2, and a hole mobility equal to or greater than 1 cm.sup.2 /V-sec; spaced apart source and drain electrodes formed over the p-type ion implanted region on the surface of the diamond substrate; an electrically insulating material formed over the p-type ion implanted region on the surface of the diamond substrate between the source and drain electrodes; and a gate electrode formed on the surface of the insulating material.
REFERENCES:
patent: 4571447 (1986-02-01), Prins
patent: 4740263 (1988-04-01), Imai et al.
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4875083 (1989-10-01), Palmour
patent: 4929986 (1990-05-01), Yoder
patent: 5030583 (1991-07-01), Beetz, Jr.
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5055424 (1991-10-01), Zeidler et al.
patent: 5072264 (1991-12-01), Jones
patent: 5099296 (1992-03-01), Mort et al.
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5173761 (1992-12-01), Dreifus et al.
Carl R. Zeisse et al, An Ion-Implanted Diamond Metal-Insulator-Semiconduc Field Effect Transistor, believed published in IEEE's Electron Device Letters in Nov. 1991.
Charles A. Hewett et al, Fabrication Of An Insulated Gate Diamond FET For High Temperature Applications, believed to be published in the Proceedings of the Hi-Temperature Electronics Conference, 16-20 Jun. 1991.
Hewett Charles A.
Nguyen Richard
Zeidler James R.
Zeisse Carl R.
Fendelman Harvey
Gregory Bernarr E.
Kagan Michael A.
Keough Thomas Glenn
The United States of America as represented by the Secretary of
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