Ion implantation with multiple concentration levels

Details Ion implantation with multiple concentration levels Ion implantation with multiple concentration levels

2005-08-09

2005-08-09

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S918000

Reexamination Certificate

active

06927153

ABSTRACT:
A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.

REFERENCES:
patent: 5973361 (1999-10-01), Hshieh et al.

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