Ion implantation to modulate amorphous carbon stress

Details Ion implantation to modulate amorphous carbon stress Ion implantation to modulate amorphous carbon stress

2006-01-24

2006-01-24

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S766000

Reexamination Certificate

active

06989332

ABSTRACT:
A method of manufacturing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate. A layer of amorphous carbon is provided above the layer of polysilicon material and inert ions are implanted into the amorphous carbon layer. The layer of amorphous carbon is patterned to form an amorphous carbon mask, and a feature is formed in the layer of polysilicon according to the amorphous carbon mask.

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