Ion implantation system with an interlock function

Details Ion implantation system with an interlock function Ion implantation system with an interlock function

2006-04-11

2006-04-11

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07026633

ABSTRACT:
An ion implantation system including a scan system for scanning an ion beam on a target wafer is provided. The ion implantation system includes a first control signal for controlling the scan system in a beam setup mode, and a second control signal for controlling the scan system in an ion implantation mode. A selection circuit selects one of the first control signal and the second control signal. A machine interface controls the selection circuit according to whether an ion implantation system is converted from the beam setup mode to the ion implantation mode. A detection device detects whether the machine interface satisfies a predetermined condition, and according to a result of the detection, a process of the ion implantation mode is decided.

REFERENCES:
patent: 5998798 (1999-12-01), Halling et al.
patent: 10-2000-21921 (2000-04-01), None

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