Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source
Reexamination Certificate
2008-07-01
2008-07-01
Tran, Thuy Vinh (Department: 2821)
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Electron or ion source
C250S42300F
Reexamination Certificate
active
07394202
ABSTRACT:
An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010cm−3at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.
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Cohen Brian C.
Horsky Thomas N.
Krull Wade A.
Sacco, Jr. George P.
Katten Muchin & Rosenman LLP
SemEquip Inc.
Tran Thuy Vinh
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