Ion implantation system

Details Ion implantation system Ion implantation system

1993-06-25

1994-08-30

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250251, 250398, H01J 37317

Patent

active

053430476

ABSTRACT:
A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.

REFERENCES:
patent: 5089710 (1992-02-01), Kikuchi et al.
patent: 5148034 (1992-09-01), Koike

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