Ion implantation process

Details Ion implantation process Ion implantation process

1986-03-04

1987-04-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29576B, 29576W, 148187, 156652, 156653, 156656, 156657, 1566591, 20419232, B44C 122, C23C 102, C03C 1500, C03C 2506

Patent

active

046558756

ABSTRACT:
Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number.
In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.

REFERENCES:
patent: 4441931 (1984-04-01), Levin
patent: 4515654 (1985-05-01), Cline
patent: 4523369 (1985-06-01), Nagakubo

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