Ion implantation of thin film CrSi.sub.2 and SiC resistors

Details Ion implantation of thin film CrSi.sub.2 and SiC resistors Ion implantation of thin film CrSi.sub.2 and SiC resistors

1987-08-12

1988-07-26

Morgenstern, Norman

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427 38, 427101, 427102, 427103, 29620, 437918, B05D 512, B05D 306, H01C 1706

Patent

active

047598360

ABSTRACT:
A thin film resistor is formed using sputtering to deposit a thin film of resistive material on an insulating surface. The sputter target is composed of constituents which are normally present in relatively large quantities in thin film resistors, such as chromium silicide and silicon carbide. The sputtered thin film material is formed into resistor regions. An insulating layer is deposited over the thin film material. Ions (e.g., boron ions) are then implanted into the thin film through the insulating layer. These implanted constituents have a significant effect on the temperature coefficient and sheet resistance of the thin film resistor. Ion implantation of these constituents enables more control over the characteristics of the thin film resistor as compared to prior art techniques not using ion implantation.

REFERENCES:
patent: 4021277 (1977-05-01), Shirn et al.
patent: 4196228 (1980-04-01), Priel et al.
patent: 4225877 (1980-09-01), Miles et al.
patent: 4510178 (1985-04-01), Paulson et al.
patent: 4520342 (1985-05-01), Vugts
patent: 4597163 (1986-07-01), Tsang
patent: 4682143 (1987-07-01), Chu et al.

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