Ion implantation method using tilted ion beam

Details Ion implantation method using tilted ion beam Ion implantation method using tilted ion beam

1997-06-02

1998-10-27

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438302, H01L 21425

Patent

active

058277749

ABSTRACT:
An ion implantation method is provided, which is able to improve the controllability of implanted dopant ions and the uniformity in concentration and profile of implanted dopant ions. A semiconductor substrate with a (100)-oriented crystal surface is prepared. An elongated mask with a specific pattern is formed on the surface of the substrate. A beam of dopant ions is irradiated to the surface of the substrate along a first direction, thereby selectively implanting the dopant ions into the substrate using the mask. The first direction has a first angle with a normal of the surface of the substrate in a plane perpendicular to a longitudinal axis of the mask, where the first angle is in the range from 7.degree. C. to 60.degree. C. The first direction has a second angle with a lateral axis of the mask in a plane parallel to the surface of the substrate, where the second angle is in the range from 5.degree. C. to 20.degree. C. The longitudinal axis of the mask is parallel to one of the <011>-directions or one of the <011>-directions.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 5155369 (1992-10-01), Current
patent: 5355006 (1994-10-01), Iguchi
patent: 5459085 (1995-10-01), Pasen et al.

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