Ion implantation method and method for manufacturing SOI wafer

Details Ion implantation method and method for manufacturing SOI wafer Ion implantation method and method for manufacturing SOI wafer

2005-08-09

2005-08-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S528000, C438S961000

Reexamination Certificate

active

06927148

ABSTRACT:
Disclosed are an ion implantation method capable of dramatically increasing an implantation rate of hydrogen ions into a semiconductor substrate and a method for manufacturing an SOI wafer, in which manufacturing efficiency of the SOI wafer is sufficiently high. When the hydrogen ions are implanted to a predetermined depth of the semiconductor substrate, hydrogen gas is introduced into a chamber where an inner pressure is reduced and a predetermined magnetic field is formed, plasma is generated by introducing a microwave into the magnetic field, hydrogen ion beams containing hydrogen molecule ions is extracted from the plasma, and the hydrogen molecule ions are irradiated and implanted onto the semiconductor substrate. Thus, a throughput in the hydrogen ion implantation is improved, thus making it possible to enhance the manufacturing efficiency of the SOI wafer.

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