Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-12-28
2008-08-26
Vanore, David A. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C427S523000, C427S530000
Reexamination Certificate
active
07417241
ABSTRACT:
An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.
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Koezuka Junichi
Shinoda Hiroto
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Souw Bernard
Vanore David A.
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