Ion implantation ion source, system and method

Details Ion implantation ion source, system and method Ion implantation ion source, system and method

2006-12-29

2010-06-08

Owens, Douglas W (Department: 2821)

Radiant energy

Ion generation

Field ionization type

C315S111810

Reexamination Certificate

active

07732787

ABSTRACT:
An ion source is disclosed that is capable of providing ions of decaborane in commercial ion current levels to the ion extraction system of an ion implanter is provided, the ion source comprising an ionization chamber defined by walls enclosing an ionization volume, there being an ion extraction aperture in a side wall of the ionization chamber, arranged to enable the ion current to be extracted from the ionization volume by an extraction system, an electron gun mounted on a support that is outside of and thermally isolated from the walls of the ionization chamber, the ion extraction aperture plate is biased to a negative voltage with respect to the ionization chamber to further increase the drift velocity of the ions, and hence the maximum obtainable current in the resulting ion beam.

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