Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1997-12-05
1999-10-26
Chaudhari, Chandra
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438514, 438530, H01L 2166
Patent
active
059727284
ABSTRACT:
A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.
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patent: 5451529 (1995-09-01), Hsu et al.
patent: 5650336 (1997-07-01), Eriguchi et al.
Chen Ming Chun
Steffan Paul J.
Advanced Micro Devices , Inc.
Chaudhari Chandra
Nelson H. Donald
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