Radiant energy – Ion generation – Electron bombardment type
Reexamination Certificate
2008-11-11
2011-12-06
Wells, Nikita (Department: 2881)
Radiant energy
Ion generation
Electron bombardment type
C250S42300F, C250S425000, C250S492210, C250S492200, C315S011000, C315S011000, C118S7230CB, C118S7230AN
Reexamination Certificate
active
08071958
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1
times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.
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Horsky Thomas N.
Jacobson Dale C.
Katten Muchin & Rosenman LLP
Paniaguas John S.
SemEquip Inc.
Wells Nikita
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