Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S909000, C438S943000, C257S350000, C257SE21321, C257SE21336
Reexamination Certificate
active
07968459
ABSTRACT:
This invention teaches methods of combining ion implantation steps with in situ or ex situ heat treatments to avoid and/or minimize implant-induced amorphization (a potential problem for source/drain (S/D) regions in FETs in ultrathin silicon on insulator layers) and implant-induced plastic relaxation of strained S/D regions (a potential problem for strained channel FETs in which the channel strain is provided by embedded S/D regions lattice mismatched with an underlying substrate layer). In a first embodiment, ion implantation is combined with in situ heat treatment by performing the ion implantation at elevated temperature. In a second embodiment, ion implantation is combined with ex situ heat treatments in a “divided-dose-anneal-in-between” (DDAB) scheme that avoids the need for tooling capable of performing hot implants.
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Bedell Stephen W.
deSouza Joel P.
Ren Zhibin
Reznicek Alexander
Sadana Devandra K.
International Business Machines - Corporation
Landau Matthew C
McCall Shepard Sonya D
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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