Ion-implantation assisted wet chemical etching of III-V nitrides

Details Ion-implantation assisted wet chemical etching of III-V nitrides Ion-implantation assisted wet chemical etching of III-V nitrides

1998-05-26

2000-07-18

Nuzzolillo, Maria

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 65, 216 67, 445 35, 445 50, H01L 213115, B44C 122

Patent

active

060903007

ABSTRACT:
A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.

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