Ion implantation apparatus with improved post mass selection dec

Details Ion implantation apparatus with improved post mass selection dec Ion implantation apparatus with improved post mass selection dec

1996-11-25

1998-05-05

Pascal, Robert

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

315506, 25049221, G21K 504

Patent

active

057479364

ABSTRACT:
A controlled deceleration potential is provided in an ion implanter between the target and the flight tube through the mass selector, by means of a variable resistance comprising a series of HEXFETs. The series of HEXFETs conduct current absorbed by the substrate back to the flight tube so that a desired decelertion potential can be formed.

REFERENCES:
patent: 4179312 (1979-12-01), Keller et al.
patent: 4595837 (1986-06-01), Wu et al.
patent: 4743806 (1988-05-01), Gyulai et al.
patent: 4766320 (1988-08-01), Naitoh et al.
patent: 4782304 (1988-11-01), Aitken
"Wafer chargeup study on the PR-80 high current ion plantation machine", by Nagai et al., Nuclear Instruments & Methods in Physics Research, vol. B37/38 No. 2, Feb. 2, 1989, pp. 572-575.

Affiliated with

Also associated with

Rating

Ion implantation apparatus with improved post mass selection dec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus with improved post mass selection dec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus with improved post mass selection dec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-57773