Ion implantation apparatus capable of avoiding electrification o

Details Ion implantation apparatus capable of avoiding electrification o Ion implantation apparatus capable of avoiding electrification o

1990-05-08

1991-02-19

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

049946749

ABSTRACT:
In an ion implantation apparatus which is for use in injecting an ion beam (11) onto a wafer (12) in a predetermined direction and which comprises an electric conductor tube (14) divided into a first tube section (17) and a second tube section (18) along the predetermined direction with an insulator interposed therebetween. The first tube section is located in proximity of the wafer and is grounded while the second tube section is remote from the wafer to be used as a target section which is bombarded by primary electrons to generate secondary electrons directed to the wafer. Undesired electrons are trapped by the first tube section and flow through the ground.
The electric conductor tube may further comprise a third tube section (21) which is electrically insulated from the second tube section and which is remote from the wafer in comparison with the second tube section in the predetermined direction. The first and the third tube sections are controlled so as to adjust their diameters in dependency upon a diameter of the ion beam.

REFERENCES:
patent: 4783597 (1988-11-01), Misawa et al.
patent: 4914292 (1990-04-01), Tamai et al.

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