Ion implantation apparatus and method of correcting...

Radiant energy – With charged particle beam deflection or focussing – Magnetic lens

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S492210, C250S492200

Reexamination Certificate

active

08008630

ABSTRACT:
To increase a transport efficiency of an ion beam by correcting Y-direction diffusion caused by the space charge effect of the ion beam between an ion beam deflector, which separates the ion beam and neutrons from each other, and a target. An ion implantation apparatus has a beam paralleling device that bends an ion beam scanned in an X direction by magnetic field to be parallel and draws a ribbon-shaped ion beam. The beam paralleling device serves also as an ion beam deflector that deflects the ion beam by magnetic field to separates neutrons from the ion beam. In the vicinity of an outlet of the beam paralleling device, there is provided an electric field lens having a plurality of electrodes opposed to each other in a Y direction with a space for passing the ion beam and narrowing the ion beam in the Y direction.

REFERENCES:
patent: 5177366 (1993-01-01), King et al.
patent: 6313474 (2001-11-01), Iwasawa et al.
patent: 6930316 (2005-08-01), Nishihashi et al.
patent: 6998625 (2006-02-01), McKenna et al.
patent: 2003/0183763 (2003-10-01), Bertsche
patent: 2003/0183780 (2003-10-01), Sano et al.
patent: 2006/0016992 (2006-01-01), Sato et al.
patent: 2006/0072427 (2006-04-01), Kanda et al.
patent: 2006/0113465 (2006-06-01), Kabasawa et al.
patent: 2007/0114455 (2007-05-01), Naito et al.
patent: 2008/0035856 (2008-02-01), Yamashita
patent: 2010/0219352 (2010-09-01), Kreckel et al.
patent: 06-068837 (1994-03-01), None
patent: 08-115701 (1996-05-01), None
patent: 3387488 (2003-01-01), None
patent: 3414380 (2003-04-01), None
patent: 2003-288857 (2003-10-01), None
patent: 3567749 (2004-06-01), None
patent: 2005-195417 (2005-07-01), None
patent: 2006-156247 (2006-06-01), None
patent: 2007-220522 (2007-08-01), None
International Search Report (English & Japanese) for PCT/JP2007/062578 mailed Sep. 18, 2007 (10 pages).
Written Opinion of ISA (Japanese) for PCT/JP2007/062578 mailed Sep. 18, 2007 (5 pages).
esp@cenet patent abstract for JP2007220522 dated Aug. 30, 2007 (1 page).
Patent Abstracts of Japan 08-115701 dated May 7, 1996 (1 page).
Patent Abstracts of Japan 2005-195417 dated Jul. 21, 2005 (1 page).
Patent Abstracts of Japan 2002-170516 dated Jun. 14, 2002.
Patent Abstracts of Japan 2002-150991 dated May 24, 2002.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion implantation apparatus and method of correcting... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus and method of correcting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus and method of correcting... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2753307

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.