Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-06-02
2009-08-18
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S398000, C250S42300F, C250S492200, C313S359100, C315S505000, C315S005410
Reexamination Certificate
active
07576339
ABSTRACT:
An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.
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Jin Seung Woo
Jung Min Yong
Jung Yong Soo
Rouh Kyoung Bong
Berman Jack I
Hynix / Semiconductor Inc.
Sahu Meenakshi S
Townsend and Townsend / and Crew LLP
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