Ion implantation apparatus and method for implanting ions by...

Details Ion implantation apparatus and method for implanting ions by... Ion implantation apparatus and method for implanting ions by...

2007-10-09

2007-10-09

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

11028003

ABSTRACT:
Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, includes: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion beam in the directions of an X-axis and an Y-axis; a second quadrupole magnet assembly for converging and diverging the ion beam passing through the scanner in the directions of the X- and Y-axes; and a beam parallelizer for rotating the ion beam in synchronization with the second quadrupole magnet assembly, thereby implanting the ion beam into the wafer.

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patent: 6903350 (2005-06-01), Vanderberg et al.
patent: 63-024061 (1988-02-01), None

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