Ion implantation apparatus and a method of monitoring high energ

Details Ion implantation apparatus and a method of monitoring high energ Ion implantation apparatus and a method of monitoring high energ

1997-06-16

1999-03-16

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 37317

Patent

active

058833919

ABSTRACT:
High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.

REFERENCES:
patent: 4539217 (1985-09-01), Farley
patent: 5319212 (1994-06-01), Tokoro
patent: 5747936 (1998-05-01), Harrison et al.
Babak Adibi et al., ION Implantation Technology--92, pp. 601-606, "Development and Applications of a Beam Energy Filter for the PI9200XJ High Current Implanter" (1992).

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