Ion implantation and surface processing method and apparatus

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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31511181, 315344, 31323131, H05H 124

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052124258

ABSTRACT:
A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a plasma source ion implantation apparatus. The periodic discharge results in the application of high voltage negative pulses to the object, causing ions from the plasma to be accelerated toward, and implanted into the object. A pulse transformer is preferably provided between the plasma switch and capacitor, and the object to step up the voltage of the pulses and enable the plasma switch to operate at lower voltage levels. The plasma switch enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry to prevent arcing between the object and plasma. A second power source, capacitor, and plasma switch may be provided to apply positive pulses to the object in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object for performing thermally assisted ion implantation, surface annealing, and the like.

REFERENCES:
patent: 3207994 (1965-09-01), Theodore et al.
patent: 4291255 (1981-09-01), Alexeff
patent: 4596945 (1985-06-01), Schumacher et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4978889 (1990-12-01), Schumacher
IEEE Conference Record, Nineteenth Power Modulator Symposium, San Diego, CA Jun. 1990, pp. 454-458, Farrell: "Generation of Closely-Spaced, Doublet, CFA Cathode Pulses with a Line-Type Modulator".
J. Pelletier and Y. Arnal, "New Application for Multipolar Plasmas: High-Temperature Treatment of Materials", Rev. Sci. Instrum. 55(10), Oct. 1984, American Institute of Physics (1984), pp. 1636-1638.

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