Ion implantation and process sequence to form smaller base...

Details Ion implantation and process sequence to form smaller base... Ion implantation and process sequence to form smaller base...

2008-03-26

2010-10-05

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S318000, C438S331000, C438S338000, C438S342000, C438S350000, C257SE21350, C257SE21352, C257SE21361

Reexamination Certificate

active

07807539

ABSTRACT:
Methods for forming a bipolar junction transistor device are described herein. A method for forming the bipolar junction transistor device may include doping a first portion of a substrate with a first dopant to form a base pick-up region, and after doping the first portion of the substrate, doping a second portion of the substrate with a second dopant to form at least one emitter region. A bipolar junction transistor device may include a floating collector, in which case the bipolar junction transistor device may be operated as a diode for improved emitter current.

REFERENCES:
patent: 7618871 (2009-11-01), Meinhardt et al.
patent: 2004/0227213 (2004-11-01), Chen
patent: 2007/0278515 (2007-12-01), Hurst
patent: 2007/0278612 (2007-12-01), Williams et al.

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