Ion implantation and process sequence to form smaller base...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...

Reexamination Certificate

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C438S318000, C438S331000, C438S338000, C438S342000, C438S350000, C257SE21350, C257SE21352, C257SE21361

Reexamination Certificate

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07807539

ABSTRACT:
Methods for forming a bipolar junction transistor device are described herein. A method for forming the bipolar junction transistor device may include doping a first portion of a substrate with a first dopant to form a base pick-up region, and after doping the first portion of the substrate, doping a second portion of the substrate with a second dopant to form at least one emitter region. A bipolar junction transistor device may include a floating collector, in which case the bipolar junction transistor device may be operated as a diode for improved emitter current.

REFERENCES:
patent: 7618871 (2009-11-01), Meinhardt et al.
patent: 2004/0227213 (2004-11-01), Chen
patent: 2007/0278515 (2007-12-01), Hurst
patent: 2007/0278612 (2007-12-01), Williams et al.

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