Ion etching and chemical vapour deposition

Details Ion etching and chemical vapour deposition Ion etching and chemical vapour deposition

1987-12-11

1989-07-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118728, 118 501, 118620, 156646, 156655, 156345, 20419223, 20419232, 204298, 427 38, B44C 122, H01L 21306, B05D 306, C23C 1400

Patent

active

048447757

ABSTRACT:
Apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa et al.
patent: 4362632 (1982-12-01), Jacob
patent: 4543465 (1985-09-01), Sakudo et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.

Affiliated with

Also associated with

Rating

Ion etching and chemical vapour deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion etching and chemical vapour deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion etching and chemical vapour deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-850538