Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-09-13
1986-11-04
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 1566591, 1566611, 156904, 156345, 204298, 2041923, 20419232, B44C 122, C03C 1500, C03C 2506
Patent
active
046208984
ABSTRACT:
An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition is occurring. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.
REFERENCES:
patent: 2841477 (1958-07-01), Hall
patent: 2989385 (1961-06-01), Gianola et al.
patent: 3113896 (1963-12-01), Mann
patent: 3271286 (1966-09-01), Lepselter
patent: 3908041 (1975-09-01), Engl et al.
patent: 3966577 (1976-06-01), Hochberg
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4293374 (1981-10-01), Chaudhari et al.
patent: 4414069 (1983-11-01), Cuomo
patent: 4486286 (1984-12-01), Lewin et al.
"Ion Beam Sputter-Deposited Diamondlike Films", B. A. Banks et al., J. Vac. Sci. Technol., 21(3), Sep./Oct. 1982, pp. 809-814.
FIG. 1 from "Thin Film Processes"--Vossen & Kern, Academic Press, 1978--(original from Proc. IEEE, vol. 62, p. 1361).
"Reactive Sputter Etching and its Application" by Wang et al. from Solid State Technology, Aug. 1980; pp. 122-126.
Banks Bruce A.
Rutledge Sharon K.
Manning John R.
Powell William A.
Shook Gene E.
The United States of America as represented by the Administrator
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