Ion beam measuring method and ion implanting apparatus

Details Ion beam measuring method and ion implanting apparatus Ion beam measuring method and ion implanting apparatus

2006-10-20

2010-02-02

Sahu, Meenakshi S (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S42300F, C250S397000, C250S492200, C250S492300, C250S426000, C250S427000, C250S250000, C250S251000, C257SE21143

Reexamination Certificate

active

07655929

ABSTRACT:
A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter. By using these results, an angle deviation, a diverging angle, and/or a beam size in the y direction of the ion beam can be obtained.

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patent: 3 358 336 (2002-12-01), None

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