Ion-beam machining method and apparatus

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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156345, 156643, 2504923, 20429836, C23F 102

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049369687

ABSTRACT:
In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h.gtoreq.d to h<<d in accordance with an increase in the depth of a hole which is being formed, to thereby control the number of sputtered particles redeposited on side walls of the hole. The apparatus includes a deflection controller for controlling an ion beam deflector and blanking electrode so as to change the above-mentioned relationship between d and h.

REFERENCES:
patent: 4457803 (1984-07-01), Takigawa
patent: 4523971 (1985-06-01), Cuomo et al.
patent: 4639301 (1987-01-01), Doherty et al.
R. L. Seliger et al., J. Vac. Sci. Technol., vol. 16 (6), pp. 1610-1612 (1979).
C. M. Melliar-Smith, J. Vac. Sci. Technol., vol. 13, No. 5, pp. 1008-1022 (1976).
R. E. Lee, J. Vac. Sci. Technol., vol. 16 (2), pp. 164-170 (1979).
L. R. Harriott et al., J. Vac. Sci. Technol., vol. B5 (1), Jan./Feb. 1987, pp. 207-210.

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