Ion beam lithography system

Details Ion beam lithography system Ion beam lithography system

1986-04-15

1987-12-01

Church, Craig E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

047106395

ABSTRACT:
When ions are implanted into desired locations on a material surface using a focused ion beam system, it is necessary to incline the direction of the implantation at about 7.degree. to a line normal to the material surface. The system according to the present invention uses a deflector consisting of deflecting elements of two stages to deflect an ion beam, for effecting such an inclination. The beam is deflected in a given direction by the deflecting element of the first stage, and then it is deflected in the opposite direction by the deflecting element of the second stage. Since chromatic aberrations of the beam caused by the deflecting elements of the two stages cancel each other, defocusing of the beam on the material due to energy dispersion is suppressed.

REFERENCES:
patent: 3889115 (1975-06-01), Tamura et al.
patent: 4218621 (1980-08-01), Nakasuji et al.

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