Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-07-09
2009-08-11
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S427000, C250S492200, C250S492300, C250S3960ML
Reexamination Certificate
active
07573051
ABSTRACT:
The present invention relates to a guide tube for an ion beam in an ion implanter located adjacent a semiconductor wafer. Such guide tubes are provided to confine charged particles used for wafer neutralisation during implantation. According to the invention, a guide tube comprises an axis, open ends to receive an ion beam along said axis, a tube wall substantially parallel with said axis, and at least one opening through the tube wall forming a gas conduction passage from inside to outside the guide tube, said passage having a length aligned at an acute angle to said guide tube axis and a minimum dimension transverse to said length such that a line of sight through the passage perpendicular to said guide tube axis is substantially occluded.
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Applied Materials Inc.
Boult Wade & Tennant
Wells Nikita
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