Ion beam for target recovery

Details Ion beam for target recovery Ion beam for target recovery

2006-12-19

2006-12-19

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192350, C204S192370, C216S066000, C216S094000

Reexamination Certificate

active

07150811

ABSTRACT:
A charged particle beam apparatus and method for locally removing material from a predetermined location on a workpiece, such as the removal of a metallization layer covering an alignment mark on a wafer. The invention is particularly suited for high-volume mass production of semiconductor chips or electromechanical devices. According to one embodiment of the invention, a layer of material covering an alignment mark on a wafer is removed by ion beam sputtering using a non-LMIS beam directed at an oblique angle to the sample surface.

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