Ion beam extractor

Details Ion beam extractor Ion beam extractor

2007-10-23

2007-10-23

Tran, Thuy Vinh (Department: 2821)

Radiant energy

Ion generation

Field ionization type

C250S3960ML

Reexamination Certificate

active

11208728

ABSTRACT:
An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

REFERENCES:
patent: 4381453 (1983-04-01), Cuomo et al.
patent: 6759807 (2004-07-01), Wahlin
patent: 6804288 (2004-10-01), Haraguchi
patent: 2003/0098126 (2003-05-01), Yeom et al.
patent: 2004/0222367 (2004-11-01), Ichiki et al.
patent: 08-096742 (1996-04-01), None

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