Ion-beam etching method and an apparatus therefor

Details Ion-beam etching method and an apparatus therefor Ion-beam etching method and an apparatus therefor

1977-01-17

1978-07-18

Dixon, Harold A.

Radiant energy

With charged particle beam deflection or focussing

With target means

250492B, A61K 2702

Patent

active

041017722

ABSTRACT:
The present invention enables a decrease in etching velocity in an ion-beam etching system without decreasing the current density of the ion beam. The ion-etching is performed at a constant value of ion-beam current density and an increased partial pressure of oxygen or other suitable gas in the specimen chamber. The partial pressure of oxygen is increased until the intensity of a secondary ion-beam from the specimen reaches a saturation value. Under these conditions a stable reduced etching velocity is obtained, the value of which is determined by the ion-beam current density, the partial pressure of oxygen and the previously determined characteristics of the specimen.

REFERENCES:
patent: 3294954 (1966-12-01), Ramsey
patent: 3377506 (1968-04-01), Banas et al.

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