Ion beam current monitoring

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S251000, C250S397000, C250S398000, C250S42300F

Reexamination Certificate

active

11361765

ABSTRACT:
An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

REFERENCES:
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5587587 (1996-12-01), Hashimoto
patent: 6323497 (2001-11-01), Walther
patent: 6452197 (2002-09-01), Ito
patent: 6608316 (2003-08-01), Harrison
patent: 6891173 (2005-05-01), Gammel et al.
patent: 2002/0130275 (2002-09-01), Mack et al.

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