Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-03-11
2008-03-11
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S251000, C250S397000, C250S398000, C250S42300F
Reexamination Certificate
active
11361765
ABSTRACT:
An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.
REFERENCES:
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5587587 (1996-12-01), Hashimoto
patent: 6323497 (2001-11-01), Walther
patent: 6452197 (2002-09-01), Ito
patent: 6608316 (2003-08-01), Harrison
patent: 6891173 (2005-05-01), Gammel et al.
patent: 2002/0130275 (2002-09-01), Mack et al.
Evans Morgan
Walther Steven R.
Varian Semiconductor Equipment Associates Inc.
Wells Nikita
LandOfFree
Ion beam current monitoring does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion beam current monitoring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion beam current monitoring will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3918288