Ion beam angle measurement systems and methods for ion...

Details Ion beam angle measurement systems and methods for ion... Ion beam angle measurement systems and methods for ion...

2005-12-12

2008-10-14

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000, C250S492200, C250S492300, C250S42300F, C250S3960ML

Reexamination Certificate

active

07435977

ABSTRACT:
Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.

REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 4276477 (1981-06-01), Enge
patent: 4745287 (1988-05-01), Turner
patent: 5483077 (1996-01-01), Glavish
patent: 6255662 (2001-07-01), Rubin et al.
patent: 6677598 (2004-01-01), Benveniste
patent: 6777695 (2004-08-01), Viviani
patent: 6828572 (2004-12-01), Reece et al.
patent: 6872953 (2005-03-01), Benveniste
patent: 7202483 (2007-04-01), Olson et al.
patent: 2002/0121889 (2002-09-01), Larsen et al.
patent: 2003/0197132 (2003-10-01), Keum et al.
patent: 2004/0149926 (2004-08-01), Purser et al.
patent: 2004/0195528 (2004-10-01), Reece et al.
patent: 2004/0262533 (2004-12-01), Krueger
patent: 2005/0082498 (2005-04-01), White
patent: 2005/0211924 (2005-09-01), Shibata et al.
patent: 2005/0247889 (2005-11-01), Yoon
patent: 2005/0253098 (2005-11-01), Petersen et al.
patent: 2006/0006346 (2006-01-01), Rathmell et al.
patent: 2006/0113493 (2006-06-01), Kabasawa et al.
patent: 2006/0113494 (2006-06-01), Chen et al.
patent: 2006/0219936 (2006-10-01), Olson et al.
patent: 2006/0219955 (2006-10-01), Ray
patent: 2006/0289798 (2006-12-01), Cummings et al.
patent: 2007/0138412 (2007-06-01), Freer
patent: 2007/0145298 (2007-06-01), Freer et al.
patent: 2003-229087 (2003-08-01), None
patent: 2003229087 (2003-08-01), None
patent: WO 2004/097881 (2004-11-01), None
“In situ beam angle measurement in a multi-wafer high current ion implanter”, B.S. Freer, R.N. Reece, M.A. Graf, T. Parrill and D. Polner, Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier, Amsterdam, NL, vol. 237, No. 1-2, Aug. 2005, 6 pgs.
International Search Report, Int'l Application No. PCT/US2006/047330, Int'l Filing Date Dec. 12, 2006, 3 pgs.
“The Extrion 220 Parallel Scan Magnet”, R.E. Kaim and P.F.H.M. Van Der Meulen, Nuclear Instruments and Methods in Physics Research B55, Section B, Beam Interactions with Materials and Atoms, Elsevier, Amsterdam, NL, vol. B55, No. 1/4, Apr. 2, 1991, pp. 453-456.
“In-Situ Ion Beam Profiling by Fast Scan Sampling”, P. Splinter, F. Sinclair, N. Demario, W. Reed, J. Castintini, D. Shen, J. Burgess and P. Ring, Ion Implantation Technology, Proceedings of the 11thInternational Conference in Austin, TX, Jun. 1996, pp. 272-275.
International Search Report, Int'l Application No. PCT/US2006/048937, Int'l Filing Date Dec. 20, 2006, 3 pgs.
Office Action dated Jan. 29, 2008 in connection with U.S. Appl. No. 11/313,319.
Response to Office Action dated Jan. 29, 2008 in connection with U.S. Appl. No. 11/313,319.

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