Ion assisted deposition process including reactive source gassif

Details Ion assisted deposition process including reactive source gassif Ion assisted deposition process including reactive source gassif

1994-03-28

1995-05-16

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419215, 20429807, 20429809, 20429812, 427563, 427564, 427578, 427579, C23C 1400, C23C 1408, C23C 1434

Patent

active

054157560

ABSTRACT:
A process for depositing a compound of a metal and a reactive gas includes heating a metal target (32), in an evacuated chamber (22) to a predetermined reaction temperature. The reaction temperature is above a critical temperature which is higher than about half the melting point of the metal but below the vaporization temperature of the metal target. At this reaction temperature, the metal target reacts with the reactive gas to produce, in gaseous form, the compound or a sub-compound of the metal and the reactive gas. The gaseous compound or sub-compound is reacted with the reactive gas on a substrate (36) to form a solid layer of the compound on the substrate.

REFERENCES:
"High-Temperature Oxidation of Metals", John Wiley & Sons Inc. pp. 253-263, Per Kofstad.
"Reaction of Oxygen with Si(111) and (100): Critical Conditions for Growth of SiO2", F. W. Smith and G. Ghidini J. Electrochemical Society, vol. 129, pp. 1300-1306, 1982.

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