Involatile semiconductor memory

Details Involatile semiconductor memory Involatile semiconductor memory

1994-12-20

1997-03-18

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257336, 257344, 257408, H01L 2976

Patent

active

056125615

ABSTRACT:
There is provided an involatile semiconductor memory deice comprising a virtual ground memory cell array which allows the read current to be increased without degrading the writing characteristic. A source/drain of a memory cell having a floating gate 3 is composed of a double diffusion layer comprising an n.sup.- -type diffusion layer 7 and an n.sup.+ -type diffusion layer 8, the n.sup.+ -type diffusion layer 8 overlaps with one end of the floating gate 3 and the other is provided with an offset of the n.sup.- -type diffusion layer 7.

REFERENCES:
patent: 5386136 (1995-01-01), Williams et al.
M. Ohi et al., "An Asymmetrical Offset Source/Drain Structure for Virtual Ground Array Flash Memory with DINOR Operation", Symposium on VLSI Technology, 1993, pp. 57-58.

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