Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-19
2010-02-09
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S151000
Reexamination Certificate
active
07659586
ABSTRACT:
A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region.
REFERENCES:
patent: 6462723 (2002-10-01), Yamazaki et al.
patent: 6730550 (2004-05-01), Yamazaki et al.
patent: 7407843 (2008-08-01), Afentakis et al.
Afentakis Themistokles
Schuele Paul J.
Voutsas Apostolos T.
Law Office of Gerald Maliszewski
Lee Calvin
Maliszewski Gerald
Sharp Laboratories of America Inc.
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