Inverter gate circuit of a bi-CMOS structure having common layer

Details Inverter gate circuit of a bi-CMOS structure having common layer Inverter gate circuit of a bi-CMOS structure having common layer

1992-03-30

1996-12-10

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055833632

ABSTRACT:
A semiconductor device comprises a p-type semiconductor substrate, an n-type semiconductor well formed on the substrate and connected to a positive power supply, a p-type semiconductor source formed within the n-type semiconductor well, a p-type semiconductor layer formed within the n-type semiconductor well and having a lower impurity concentration than the p-type semiconductor source, a first gate electrode formed over a region between the p-type semiconductor source and the p-type semiconductor layer through an insulating film, an n-type semiconductor emitter formed over the p-type semiconductor layer within the n-type semiconductor well, a first conductive layer formed over the n-type semiconductor well to connect with said p-type semiconductor source.

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Neues Aus Der Technik, No. 2, Apr. 1, 1977 `Speicher Mit Magnetishchen "Bubble-Domanan"`, col. 3; figure 5.
"Full-Swing Complementary BiCMOS Logic Circuits", Hyn J. Shin, et al. Proceedings of the 1989 Bipolar Circuits and Technology Meeting IEEE, 89CH2771-4 Paper 8.7 pp. 229-232.

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