Inverted-trench grounded-source field effect transistor...

Details Inverted-trench grounded-source field effect transistor... Inverted-trench grounded-source field effect transistor...

2006-08-08

2009-12-15

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S341000, C257SE29257, C257SE29260

Reexamination Certificate

active

07633120

ABSTRACT:
This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a shielded gate trench (SGT) structure below and insulated from the trenched gate. The SGT structure is formed substantially as a round hole having a lateral expansion extended beyond the trench gate and covered by a dielectric linen layer filled with a trenched gate material. The round hole is formed by an isotropic etch at the bottom of the trenched gate and is insulated from the trenched gate by an oxide insulation layer. The round hole has a lateral expansion beyond the trench walls and the lateral expansion serves as a vertical alignment landmark for controlling the depth of the trenched gate. The MOSFET device has a reduced gate to drain capacitance Cgd depending on the controllable depth of the trenched gate disposed above the SGT structure formed as a round hole below the trenched gate.

REFERENCES:
patent: 6906380 (2005-06-01), Pattanayak et al.
patent: 2006/0113589 (2006-06-01), Jones

Affiliated with

Also associated with

Rating

Inverted-trench grounded-source field effect transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Inverted-trench grounded-source field effect transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inverted-trench grounded-source field effect transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069318