Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29260
Reexamination Certificate
active
08008716
ABSTRACT:
This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.
REFERENCES:
patent: 6906380 (2005-06-01), Pattanayak et al.
Bhalla Anup
Hébert François
Lui Sik K
Alpha & Omega Semiconductor, Ltd
Bryant Kiesha R
Lin Bo-In
Wright Tucker
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