Inverted-trench grounded-source FET structure using...

Details Inverted-trench grounded-source FET structure using... Inverted-trench grounded-source FET structure using...

2009-12-11

2011-11-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S341000, C257SE29257, C257SE29260, C438S270000, C438S589000

Reexamination Certificate

active

08053834

ABSTRACT:
This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate. The semiconductor power device further comprises a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by a body region encompassing a source region with a low resistivity body-source structure connected to a bottom source electrode and a drain link region disposed on top of said body regions thus constituting a drift region. The drift region is operated with a floating potential said iT-FET device achieving a self-termination.

REFERENCES:
patent: 6906380 (2005-06-01), Pattanayak et al.

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