Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-07-17
2010-06-22
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257SE31063, C257S185000, C257S438000
Reexamination Certificate
active
07741657
ABSTRACT:
An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type of semiconductor material disposed proximate to the semiconductor substrate layer. The apparatus also includes an absorption layer having a second type of semiconductor material disposed proximate to the multiplication layer such that the multiplication layer is disposed between the absorption layer and the semiconductor substrate layer. The absorption layer is optically coupled to receive and absorb an optical beam. The apparatus also includes an n+ doped region of the first type of semiconductor material defined at a surface of the multiplication layer opposite the absorption layer. A high electric field is generated in the multiplication layer to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the absorption layer.
REFERENCES:
patent: 3324297 (1967-06-01), Stieltjes et al.
patent: 4009058 (1977-02-01), Mills
patent: 4212019 (1980-07-01), Wataze et al.
patent: 4786573 (1988-11-01), Amada et al.
patent: 5157473 (1992-10-01), Okazaki
patent: 5233209 (1993-08-01), Rodgers et al.
patent: 5280189 (1994-01-01), Schuppert et al.
patent: 5401952 (1995-03-01), Sugawa
patent: 5420634 (1995-05-01), Matsumoto
patent: 5596186 (1997-01-01), Kobayashi
patent: 5654578 (1997-08-01), Watanabe
patent: 5757057 (1998-05-01), Dabrowski
patent: 5897371 (1999-04-01), Yeh et al.
patent: 6074892 (2000-06-01), Bowers et al.
patent: 6104047 (2000-08-01), Watanabe
patent: 6130441 (2000-10-01), Bowers et al.
patent: 6384462 (2002-05-01), Pauchard et al.
patent: 6459107 (2002-10-01), Sugiyama et al.
patent: 6465803 (2002-10-01), Bowers et al.
patent: 6492239 (2002-12-01), Yang et al.
patent: 6515315 (2003-02-01), Itzler et al.
patent: 6632028 (2003-10-01), Yang et al.
patent: 6635908 (2003-10-01), Tanaka et al.
patent: 6693308 (2004-02-01), Sankin et al.
patent: 6759675 (2004-07-01), Csutak et al.
patent: 6797581 (2004-09-01), Vickers
patent: 6831265 (2004-12-01), Yoneda et al.
patent: 6858463 (2005-02-01), Bond
patent: 6858912 (2005-02-01), Marshall et al.
patent: 6963089 (2005-11-01), Shi et al.
patent: 7072557 (2006-07-01), Nagarajan et al.
patent: 7082248 (2006-07-01), Morse
patent: 7122734 (2006-10-01), Fetzer et al.
patent: 7160753 (2007-01-01), Williams, Jr.
patent: 7271405 (2007-09-01), Krishna et al.
patent: 7348608 (2008-03-01), Ko et al.
patent: 2005/0006678 (2005-01-01), Tanaka et al.
patent: 1327272 (2001-12-01), None
patent: 0 709 901 (1996-05-01), None
patent: 2 025 693 (1980-01-01), None
patent: 2 054 957 (1981-02-01), None
patent: 61-226976 (1986-10-01), None
patent: 04-093088 (1992-03-01), None
patent: 100206079 (1999-07-01), None
patent: WO 2004/027879 (2004-04-01), None
PCT/US2007/072879, International Search Report and Written Opinion, mailed Nov. 29, 2007.
Temkin, H. et al., “Ge0.6Si0.4rib waveguide avalanche photodetectors for 1.3 μm operation”, Appl. Phys. Lett. 49 (13), Sep. 29, 1986, pp. 1311-1313.
Liu, Y. et al., “Simple, very low dark current, planar long-wavelength avalanche photodiode”, Appl. Phys. Lett. 53 (14), Oct. 3, 1988, pp. 809-811.
Liu, Y. et al., “A Planar InP/InGaAs Avalanche Photodiode with Floating Guard Ring and Double Diffused Junction”, Journal of Lightwave Technology, 10 (2), Feb. 1992, pp. 182-193.
Hawking, A.R. et al., “High gain-bandwidth-product silicon heterointerface photodetector”, Appl. Phys. Lett. 70 (3), Jan 20, 1997, pp. 303-305.
Herbert, D.C., “Theory of SiGe Waveguide Avalanche Detectors Operating at λ=1.3 μm”, IEEE Transactions on Electron Devices, 45 (4), Apr. 1998, pp. 791-796.
Cho, S.R. et al., “Suppression of avalanche gain at the junction periphery by floating guard rings in a planar InGaAs/InGaAsP/InP avalanche photodiodes”, CLEO 2000, May 9, 2000, pp. 212-213.
Kang, Y. et al., “Fused InGaAs-Si Avalanche Photodiodes With Low-Noise Performances”, IEEE Photonics Technology Letters, 14 (11), Nov. 2002, pp. 1593-1595.
Shi, Jin-Wei et al., “Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors”, Journal of Lightvvave Technology, 22 (6), Jun. 2004, pp. 1583-1590.
Herbert, D.C. et al., “Impact ionisation and noise in SiGe multiquantum well structures,” Electronics Letters, vol. 32, No. 17, Aug. 15, 1996, pp. 1616-1618.
Nie, H. et al., “Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes With High-Speed and High Gain-Bandwidth Product,” IEEE Photonics Technology Letters, vol. 10, No. 3, Mar. 1998, pp. 409-411.
Lenox, C. et al., “Resonant-Cavity InGaAs-InAlAs Avalanche Photodiodes with Gain-Bandwidth Product of 290 GHz,” IEEE Photonics Technology Letters, vol. 11, No. 9, Sep. 1999, pp. 1162-1164.
Pauchard, A. et al., “High-performance InGaAs-on-silicon avalanche photodiodes,” Wednesday Afternoon, OFC 2002, pp. 345-346.
Loudon, A. et al., “Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers,” Optics Letters, vol. 27, No. 4, Feb. 15, 2002, pp. 219-221.
Das, N.R. et al., “On the frequency response of a resonant-cavity-enhanced separate absorption, grading, charge, and multiplication avalanche photodiode,” Journal of Applied Physics, vol. 92, No. 12, Dec. 15, 2002, pp. 7133-7145.
Emsley, M. et al., “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photonics Technology Letters, vol. 14, No. 4, Apr. 2002, pp. 519-521.
Dosunmu, O. et al., “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operations,” IEEE Photonics Technology Letters, vol. 17, No. 1, Jan. 2005, pp. 175-177.
Hawkins, A. et al., “High gain-bandwidth-product silicon heterointerface photodetector,” Appl. Phys. Letter 70 (3), Jan. 20, 1997, pp. 303-305.
Lee, D. et al., “Ion-Implanted Planar-Mesa IMPATT Diodes for Millimeter Wavelengths,” IEEE Transactions on Electron Devices, vol. Ed-25, No. 6, Jun. 1978, pp. 714-722.
Liu, Y. et al., “Simple, very low dark current, planar long-wavelength avalanche photodiode,” Appl. Phys. Letter 53 (14), Oct. 3, 1988, pp. 1311-1313.
Mikawa, T. et al., “Germanium Reachthrough Avalanche Photodiodes for Optical Communication Systems at 1.55-μm Wavelength Region,” IEEE Transactions on Electron Devices, vol. Ed-31, No. 7, Jul. 1984, pp. 971-977.
Mikami, O. et al., “Improved Germanium Avalanche Photodiodes,” IEEE Journal of Quantum Electronics, vol. QE-16, No. 9, Sep. 1980, pp. 1002-1007.
Yoshimoto, T. et al., “SOI Waveguide GeSi Avalanche Pin Photodetector at 1.3 μm Wavelength,” IEICE Trans. Electron, vol. E81-C, No. 10, Oct. 1998, pp. 1667-1669.
Sugiyama, M. et al., “A 1.3-μm Operation Si-Based Planar P-I-N Photodiode with Ge Absorption Layer Using Strain-Relaxing Selective Epitaxial Growth Technology,” Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society of Applied Physics, Sep. 1998, pp. 384-385.
Kesan, V.P. et al., “Integrated Waveguide-Photodetector Using Si/SiGe Multiple Quantum Wells for Long Wavelength Applications,” Conference Article, Dec. 9, 1990, pp. 637-640.
Ru, Y. et al., “The properties of Epitaxial Pure Germanium Films on Silicon Substrate,” IEEE, 2001, pp. 634-636.
Li, N. et al., “InGaAs/InAlAs avalanche photodiode with undepleted absorber,” Applied Physics Letters, vol. 82, No. 13, Mar. 31, 2003, pp. 2175-2177.
Zheng, L. et al., “Demonstration of High-Speed Staggered Lineup GaAsSb-InP Unitravelin
Morse Michael T.
Pauchard Alexandre
Blakely , Sokoloff, Taylor & Zafman LLP
Chu Chris C
Intel Corporation
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