Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-01-30
2007-01-30
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S096000, C257S103000
Reexamination Certificate
active
10367495
ABSTRACT:
An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
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Bergmann Michael John
Doverspike Kathleen Marie
Edmond John Adam
Kong Hua-Shuang
Crane Sara
Cree Inc.
Summa, Allan & Additon, P.A.
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