Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S506000
Reexamination Certificate
active
06891229
ABSTRACT:
A method of forming a semiconductor device so as to provide the device inverted isolation trenches with convex sidewalls. Initially, a plurality of composite isolation posts (50, 51) are formed on a substrate (40) through successive deposition, lithography, and etching steps. The posts comprise a bottom layer (501, 502) of silicon dioxide and an overlying etch-stop layer of silicon nitride (502, 512). An insulating material (60) is then deposited over the isolation posts and areas of the substrate. Isolation structures (70,71) are established by etching the insulating material to form convex sidewall spacers (701,702, 711, 712) at the vertical walls of the isolation posts. Active areas (80) between spacers are filled with semiconductor material. In an embodiment, a strained cap layer (101) may be imposed on the active areas. The strained cap layer has a lattice constant that is different from the lattice constant of the semiconductor material.
REFERENCES:
patent: 5498567 (1996-03-01), Klose et al.
patent: 5849077 (1998-12-01), Kenney
patent: 5960270 (1999-09-01), Misra et al.
patent: 6010930 (2000-01-01), Keller et al.
patent: 6060385 (2000-05-01), Givens
patent: 6207517 (2001-03-01), Muller
patent: 6207577 (2001-03-01), Wang et al.
patent: 6362071 (2002-03-01), Nguyen et al.
patent: 6475916 (2002-11-01), Lee et al.
patent: 6664195 (2003-12-01), Jang et al.
patent: 6686630 (2004-02-01), Hanafi et al.
Cobb Jonathan
Franke Andrea
Grant John M.
Koh Al T.
Lii Yeong-Jyh T.
Blum David S.
Freescale Semiconductor Inc.
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