Inverse-T tungsten gate apparatus

Details Inverse-T tungsten gate apparatus Inverse-T tungsten gate apparatus

1998-09-24

2000-05-02

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257377, 257382, 257383, 257384, 257412, 257413, 257754, 257755, 257756, 257757, 257770, 257388, H01L 2701, H01L 2712, H01L 310392

Patent

active

06057576&

ABSTRACT:
A technique for fabricating an integrated circuit device 100 using an inverse-T tungsten gate structure 121 overlying a silicided layer 119 is provided. This technique uses steps of forming a high quality gate oxide layer 115 overlying a semiconductor substrate 111. The silicided layer 119 is defined overlying the gate oxide layer 115. The silicided layer 119 does not substantially react to this layer. The technique defines the inverse-T tungsten gate electrode layer 121 overlying the silicided layer 119. A top surface of this gate electrode may also be silicided 127 to further reduce the resistance of this device element.

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